Additive Manufacturing of Cupric Oxide via Direct Ink Writing

Muhammad Ali; Shaheryar A. Khan; Aqueel Shah; Antash Najib; Abbas Hussain

doi:10.36561/ING.30.3

Autores

Muhammad Ali National University of Sciences and Technology, Pakistán https://orcid.org/0009-0006-8014-5737
Shaheryar A. Khan DHA Suffa University, Pakistán https://orcid.org/0000-0003-1600-7322
Aqueel Shah University of Sciences and Technology, Pakistán
Antash Najib National University of Sciences and Technology, Pakistán https://orcid.org/0000-0002-4845-9350
Abbas Hussain National University of Sciences and Technology, Pakistán https://orcid.org/0009-0008-1680-6507

DOI:

https://doi.org/10.36561/ING.30.3

Palavras-chave:

Cerâmicas Avançadas, Impressão Direta de Tinta, Manufatura Aditiva, Óxido de Cobre, Óxido Cúprico, Aglutinante, Cerâmicas, Corpo Verde, Corpo Marrom, Cerâmica Sinterizada, Análise de Resistividade de Cerâmica, Suspensão Aquosa de Aglutinante, Suspensão com Partículas

Resumo

A abordagem de escrita direta de tinta (DIW) oferece inúmeros benefícios, incluindo prototipagem acelerada, custo-benefício, redução de desperdício na fabricação e maior flexibilidade de design. Atualmente, é um método de produção popular para materiais de construção e tem grande potencial para materiais porosos e eletrônicos. Neste estudo, cerâmicas porosas de óxido cúprico (CuO) foram fabricadas utilizando uma abordagem de escrita direta de tinta (DIW) baseada em um precursor aquoso carregado com partículas de cobre. A formulação da tinta foi otimizada para obter extrusão estável e corpos verdes sem trincas, resultando em uma composição final de 68,0% em peso de Cu, 31,3% em peso de água e 0,6% em peso de CMC. Após oxidação e sinterização ao ar, as estruturas impressas apresentaram uma densidade aparente de 3,60 ± 0,20 g cm⁻³ e uma porosidade teórica correspondente de 43,7 ± 0,9%. A difração de raios X confirmou a presença de CuO monoclínico quase puro, sem resíduos detectáveis de Cu ou Cu₂O. Os componentes impressos exibiram uma microestrutura porosa interconectada e uma resistividade de quatro pontos de 10,5 ± 0,3 Ω·m a 25 °C, refletindo a influência da alta porosidade no transporte de carga. A rota DIW demonstrada aqui fornece um caminho controlável para produzir arquiteturas porosas de CuO com microestrutura ajustável e condutividade elétrica moderada. Essas características sugerem potencial aplicabilidade em filtração de gases, suportes catalíticos e sensores eletroquímicos; no entanto, a validação em nível de dispositivo ainda é necessária para avaliar completamente o desempenho funcional.

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